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2DB1132P-13

Part No 2DB1132P-13
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS PNP 32V 1A SOT89-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel package
Transistor Type PNP
Current - Collector (Ic) (Maximum) 1A
Voltage - Collector Emitter Breakdown (Maximum) 32V
Vce Saturation (Maximum) @ Ib, Ic 500mV @ 50mA, 500mA
Current - Collector Cutoff (Maximum) 500nA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce 82 @ 100mA, 3V
Power - Max 1W
Frequency - Transition 190MHz
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Package TO-243AA
Manufacturer Package SOT-89-3
Win Source Part Number 762156-2DB1132P-13
Family Name 2DB1132P
Introduction Date October 12, 2007
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2DB1132P-13 CAD Model

Description

Introducing the 2DB1132P-13 PNP Transistor from Diodes Incorporated

Diodes Incorporated presents the 2DB1132P-13, a high-quality PNP transistor designed for general-purpose amplifier and switching applications. This versatile component is a must-have for electronic enthusiasts and professionals looking to enhance their circuit designs with reliable and efficient performance.

Key Features

  • High Current Capability: The 2DB1132P-13 is capable of handling continuous collector currents up to -1A, making it suitable for a variety of power applications.
  • Low Saturation Voltage: With a low collector-emitter saturation voltage, this transistor ensures minimal power loss and heat generation, leading to more efficient operation and longer device life.
  • High Gain Bandwidth Product: It offers excellent frequency characteristics, with a transition frequency of 100MHz, which is ideal for amplification of high-speed signals.
  • Complementary NPN Type Available: For design flexibility, Diodes Incorporated offers a complementary NPN transistor, allowing for push-pull amplifier configurations and other complementary circuit designs.

Package and Reliability

The 2DB1132P-13 is housed in a small SOT-23 package, which is not only space-saving but also ensures a low thermal resistance. This compact form factor makes it suitable for high-density PCB designs and portable electronic devices. Furthermore, the product is characterized by its high reliability, with a robust design that meets the stringent quality standards set by Diodes Incorporated.

Applications

Thanks to its versatile characteristics, the 2DB1132P-13 is an excellent choice for a wide range of applications, including:

  • Audio Amplifiers
  • Signal Processing
  • Power Management Circuits
  • Driver Stages in Hi-Fi Systems
  • Switching Regulators
  • Various other Electronic Circuits

Conclusion

Whether you're designing a new audio amplifier or looking to improve the efficiency of your power management systems, the 2DB1132P-13 from Diodes Incorporated offers the performance and reliability you need. With its high current capability, low saturation voltage, and compact packaging, this PNP transistor stands out as an excellent component for your next project.

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Pricing & Ordering

Quantity Unit Price Ext. Price
315+ $0.1857 $58.4955
760+ $0.1525 $115.9000
1,175+ $0.1478 $173.6650
1,620+ $0.1429 $231.4980
2,095+ $0.1381 $289.3195
2,800+ $0.1238 $346.6400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 315 pcs
Order Increment : 1 pcs
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