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2DD1664Q-13

Part No 2DD1664Q-13
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS NPN 32V 1A SOT89-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 32V
Max Vce (sat) 400mV @ 50mA, 500mA
Collector Cut-off Current(Max) 100nA
Typical Gain (hFE) (Min) 120 @ 100mA, 3V
Maximum Power Dissipation 1W
Frequency - Transition 280MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-89-3
Win Source Part Number 005683-2DD1664Q-13
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2DD1664Q-13 CAD Model

Description

Introducing Product 2DD1664Q-13 from Diodes Incorporated

Diodes Incorporated, a leading manufacturer in the semiconductor market, presents the 2DD1664Q-13, a high-performance, NPN bipolar transistor designed to meet the needs of modern electronic applications. This versatile component is a perfect fit for a wide range of switching and amplification tasks, offering reliability and efficiency in a compact SOT-23 package.

Key Features

  • Low V<sub>CE(sat): The 2DD1664Q-13 boasts a low collector-emitter saturation voltage, which translates to reduced power loss and improved overall efficiency in circuit operation.
  • High Current Gain Bandwidth Product: With an impressive gain bandwidth product, this transistor is well-suited for applications requiring high-frequency performance.
  • High Collector Current: The device can handle a high collector current, making it suitable for driving larger loads.
  • Robust Thermal Performance: The 2DD1664Q-13 is designed to operate reliably over a wide temperature range, ensuring stable performance across various environmental conditions.

Applications

The 2DD1664Q-13 is a versatile component that can be used in a variety of applications, including:

  • Switching circuits
  • Amplifier stages
  • Signal processing
  • Power management solutions
  • Motor control systems

Product Specifications

The 2DD1664Q-13 comes with the following specifications:

  • Package: SOT-23
  • Transistor Polarity: NPN
  • Collector-Emitter Voltage V<sub>CEO: 50V
  • Collector Base Voltage V<sub>CBO: 60V
  • Emitter Base Voltage V<sub>EBO: 6V
  • Collector Current - Continuous I<sub>C: 150mA
  • Power Dissipation P<sub>D: 200mW

Quality and Reliability

Diodes Incorporated is committed to delivering high-quality products. The 2DD1664Q-13 is built to the highest standards, ensuring that it not only meets but exceeds industry quality benchmarks. Customers can trust this product for its durability and long-term reliability in their electronic projects.

Whether you are designing a simple circuit or a complex system, the 2DD1664Q-13 from Diodes Incorporated is an excellent choice for a robust and efficient NPN bipolar transistor.

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Pricing & Ordering

Quantity Unit Price Ext. Price
205+ $0.2453 $50.2865
500+ $0.2013 $100.6500
770+ $0.1950 $150.1500
1,060+ $0.1887 $200.0220
1,375+ $0.1824 $250.8000
1,835+ $0.1636 $300.2060
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,287 pieces
MOQ: 205 pcs
Order Increment : 1 pcs
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