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Same model may have multiple batches, images only for reference.
VS-C10ET07T-M3
Same model may have multiple batches, images only for reference.

VS-C10ET07T-M3

Part No VS-C10ET07T-M3
Manufacturer Vishay
Catalog Diodes, Rectifiers - Single
Description DIODE SIL CARB 650V 10A TO220AC / Diode 650 V 10A Through Hole TO-220AC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes
Mfr Vishay General Semiconductor - Diodes Division
Series -
Package Tube
Product Status Obsolete
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 10A
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 55 µA @ 650 V
Capacitance @ Vr, F 430pF @ 1V, 1MHz
Mounting Type Through Hole
Package / Case TO-220-2
Supplier Device Package TO-220AC
Operating Temperature - Junction -55°C ~ 175°C
Base Product Number C10ET07
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 1367262-VS-C10ET07T-M3
Ultra Librarian 3D Model Ultra Librarian VS-C10ET07T-M3 CAD Model

Description

The VS-C10ET07T-M3 is a single diode rectifier from Vishay General Semiconductor - Diodes Division.

  • Diode Type: SiC Schottky
  • Voltage - Reverse (Max): 650V
  • Current - Average Rectified (Io): 10A
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Operating Temperature: -55°C to 175°C
  • Speed: Fast Recovery
  • Current - Reverse Leakage @ Vr: 55μA @ 650V

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