The BC846B-7 is a high-quality NPN bipolar junction transistor (BJT) from Diodes Incorporated, designed to suit a wide range of applications requiring low power and medium voltage. This versatile transistor is an essential component in the world of electronics, offering reliable performance in a compact SOT-23 package.

Key Features

• Transistor Type: NPN - This allows for the amplification of current, making it suitable for switching and amplification applications.
• Current - Collector (Ic) (Max): 100mA - The BC846B-7 can handle a collector current up to 100mA, making it ideal for small signal processing.
• Voltage - Collector Emitter Breakdown (Max): 65V - With a maximum collector-emitter breakdown voltage of 65V, it can be used in circuits with moderate voltage requirements.
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V - The transistor has a high DC current gain, ensuring efficient current amplification at low collector currents.
• Power - Max: 250mW - A maximum power dissipation of 250mW allows for adequate power handling within a range of electronic circuits.
• Frequency - Transition: 100MHz - The transition frequency of 100MHz makes this transistor suitable for RF and high-speed signal processing.

Applications

The BC846B-7 transistor is commonly used in a variety of electronic applications due to its versatility and performance. These include:

• General-purpose switching and amplification
• Audio amplifiers
• Signal processing
• Driver stages in hi-fi amplifiers and television circuits
• Low noise input stages of tape recorders and hi-fi equipment

Product Quality and Support

Diodes Incorporated is known for its commitment to product quality and customer support. The BC846B-7 is manufactured to high standards, ensuring reliability and performance for your electronic projects. Should you require additional information or technical support, Diodes Incorporated provides extensive documentation and responsive customer service.