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BC846BQ-13-F

Part No BC846BQ-13-F
Manufacturer Diodes Incorporated
Catalog RF Transistors (BJT)
Description SS MID-PERF TRANSISTOR SOT23 T&R  /  Bipolar (BJT) Transistor NPN 65 V 100 mA 300MHz 310 mW Surface Mount SOT-23-3
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Diodes Incorporated
Package Tape & Reel (TR)
Transistor Type NPN
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 65 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V
Power - Max 310 mW
Frequency - Transition 300MHz
Temperature Range - Operating -65°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3
Base Product Number BC846B
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Names 31-BC846BQ-13-FTR
Standard Package 10,000
Win Source Part Number 1048398-BC846BQ-13-F
Ultra Librarian 3D Model Ultra Librarian BC846BQ-13-F CAD Model

Description

Diodes Incorporated BC846BQ-13-F NPN Transistor

The BC846BQ-13-F is a high-quality NPN bipolar junction transistor (BJT) from Diodes Incorporated, designed to offer excellent performance in a wide array of electronic applications. This versatile component is part of the BC846 series, known for its reliability and efficiency, making it a preferred choice for design engineers.

This particular transistor features a compact SOT-23 package, which is ideal for space-constrained applications. Despite its small size, it is capable of handling a continuous collector current of up to 100 mA. Moreover, the BC846BQ-13-F boasts a low collector-emitter voltage (V<sub>CEO) of 65V, ensuring it can operate effectively in circuits with moderate voltage requirements.

The h<sub>FE (DC current gain) of the BC846BQ-13-F is classified as group B, with a range of 200 to 450, providing a consistent and predictable amplification factor for signal processing. This makes it an excellent choice for amplification stages in audio devices, signal processing, and other general-purpose applications where a stable gain is crucial.

With its low noise figure and high gain-bandwidth product, the BC846BQ-13-F is also well-suited for use in RF applications. Its fast switching speeds enable it to perform well in digital circuits, such as switching and amplification in consumer electronics, computing devices, and telecommunication systems.

The device is also characterized by its low saturation voltage, which minimizes power loss and improves efficiency, particularly in low-power applications. Additionally, the BC846BQ-13-F features a robust thermal performance, ensuring reliability over a broad operating temperature range.

Diodes Incorporated has designed the BC846BQ-13-F to be RoHS compliant, reflecting a commitment to environmental sustainability. This ensures that the product is free from hazardous substances, making it suitable for use in various markets, including those with strict environmental regulations.

In summary, the BC846BQ-13-F from Diodes Incorporated is a high-performance NPN transistor that offers a blend of compact packaging, high current capacity, and efficient operation, making it an excellent choice for a multitude of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
205+ $0.2474 $50.7170
495+ $0.2030 $100.4850
765+ $0.1967 $150.4755
1,055+ $0.1903 $200.7665
1,360+ $0.1840 $250.2400
1,820+ $0.1650 $300.3000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 54,700 pieces
MOQ: 205 pcs
Order Increment : 1 pcs
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