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BC857AW-7-F

Part No BC857AW-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS PNP 45V 0.1A SC70-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 45V
Max Vce (sat) 650mV @ 5mA, 100mA
Collector Cut-off Current(Max) 15nA (ICBO)
Typical Gain (hFE) (Min) 125 @ 2mA, 5V
Maximum Power Dissipation 200mW
Frequency - Transition 200MHz
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-323
Win Source Part Number 1022498-BC857AW-7-F
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BC857AW-7-F CAD Model

Description

Diodes Incorporated BC857AW-7-F PNP Transistor

The BC857AW-7-F is a high-quality PNP bipolar junction transistor (BJT) from Diodes Incorporated, a leading manufacturer in the semiconductor industry. This transistor is designed for general-purpose amplification and switching applications, making it a versatile component for a wide range of electronic circuits.

Featuring a compact SOT-323 package, the BC857AW-7-F is optimized for space-constrained applications. Its small footprint allows for high-density PCB layouts, which is essential for modern electronic devices that demand miniaturization without compromising performance.

With a collector-emitter voltage (Vceo) of -45V and a collector current (Ic) of -100mA, the BC857AW-7-F can handle moderate power levels, suitable for various low-power applications. Additionally, it boasts a collector-base voltage (Vcbo) of -50V and an emitter-base voltage (Vebo) of -5V, providing a good margin for safe operation under typical circuit conditions.

The device features a -500mA peak collector current and a power dissipation of 200mW, which ensures reliable operation even under transient conditions that may occur in switching applications. The BC857AW-7-F also provides a gain bandwidth product (fT) of 100MHz, which is indicative of its capability to perform well in high-frequency signal amplification.

Diodes Incorporated has designed the BC857AW-7-F with a continuous collector current of -100mA and a DC current gain (hFE) range of 125 to 800 at -2mA, which makes it an efficient choice for amplification purposes. The transistor also features low noise figures, contributing to its utility in audio amplification and signal processing tasks where maintaining signal integrity is crucial.

Environmental concerns are also addressed with the BC857AW-7-F, as it is a "Green" device. It is fully RoHS compliant, meaning it is free from hazardous substances such as lead, mercury, and cadmium, making it suitable for use in environmentally-sensitive products.

In summary, the BC857AW-7-F from Diodes Incorporated is a reliable and efficient PNP transistor that offers excellent performance for general-purpose amplification and switching. Its compact size, power handling capabilities, and environmental compliance make it a smart choice for designers looking to create sophisticated electronic products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3,335+ $0.0173 $57.6955
8,335+ $0.0139 $115.8565
12,500+ $0.0139 $173.7500
16,670+ $0.0139 $231.7130
22,730+ $0.0127 $288.6710
30,000+ $0.0116 $348.0000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 148,000 pieces
MOQ: 3335 pcs
Order Increment : 1 pcs
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