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BC857C-7-F

Part No BC857C-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS PNP 45V 0.1A SOT23-3
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Diodes Incorporated
Package Tape & Reel
Product Status Active
Transistor Type PNP
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V
Power - Max 300 mW
Frequency - Transition 200MHz
Temperature Range - Operating -65°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3
Base Product Number BC857
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 569456-BC857C-7-F
Ultra Librarian 3D Model Ultra Librarian BC857C-7-F CAD Model

Description

Diodes Incorporated BC857C-7-F PNP Transistor

The BC857C-7-F is a high-quality PNP bipolar junction transistor (BJT) from Diodes Incorporated, renowned for its reliability and efficiency in various electronic applications. This semiconductor device is designed for general-purpose amplification and switching applications, making it a versatile component in the electronics industry.

With its compact SOT-23 form factor, the BC857C-7-F is an ideal choice for space-constrained applications. The small footprint allows for high-density PCB layouts, which is crucial for modern electronic designs that demand miniaturization without compromising on performance.

The BC857C-7-F transistor features a collector-emitter voltage (V<sub>CEO) of -45V and a collector current (I<sub>C) of up to -100mA. This makes it suitable for driving moderate loads in a circuit. Additionally, the transistor has a high gain bandwidth product (f<sub>T) which ensures its capability to operate effectively at higher frequencies, making it a good choice for audio amplification and signal processing tasks.

The device also boasts a low collector-emitter saturation voltage, which translates to reduced power dissipation during operation. This characteristic is particularly beneficial for battery-powered devices, where energy efficiency is paramount. Furthermore, the BC857C-7-F has excellent linearity, which contributes to a low distortion output, a critical factor for high-fidelity audio applications.

Diodes Incorporated has designed the BC857C-7-F with a -65°C to +150°C operating junction temperature range, ensuring reliable performance across a wide range of environmental conditions. Additionally, the product comes in a "green" molding compound as per the RoHS directive, making it an environmentally friendly choice for manufacturers concerned with sustainability.

In summary, the Diodes Incorporated BC857C-7-F PNP transistor is an efficient, compact, and robust component suitable for a myriad of applications, including but not limited to amplification, switching, and signal processing. Its performance characteristics and compliance with environmental standards make it an excellent choice for designers and engineers looking to create reliable and eco-conscious electronic products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
490+ $0.1027 $50.3230
1,190+ $0.0843 $100.3170
1,840+ $0.0816 $150.1440
2,535+ $0.0790 $200.2650
3,275+ $0.0764 $250.2100
4,380+ $0.0685 $300.0300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,000 pieces
MOQ: 490 pcs
Order Increment : 1 pcs
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