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BCP5516TA

Part No BCP5516TA
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS NPN 60V 1A SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 60V
Max Vce (sat) 500mV @ 50mA, 500mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 150mA, 2V
Maximum Power Dissipation 2W
Frequency - Transition 150MHz
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Win Source Part Number 011197-BCP5516TA
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BCP5516TA CAD Model

Description

Introducing the BCP5516TA - A Robust NPN Bipolar Transistor from Diodes Incorporated

The BCP5516TA is a high-performance NPN bipolar (BJT) transistor designed and manufactured by Diodes Incorporated, a leading global provider of discrete, logic, analog, and mixed-signal components. This device is engineered to deliver exceptional efficiency, reliability, and thermal stability, making it an ideal choice for a wide range of electronic applications.

Encased in a compact SOT-223 package, the BCP5516TA offers a seamless integration into various circuit designs. With its small footprint, this transistor is particularly suitable for space-constrained applications without compromising on power handling capabilities. The SOT-223 package is also known for its excellent power dissipation, ensuring the BCP5516TA operates effectively even under high-load conditions.

The BCP5516TA boasts impressive electrical characteristics, including a collector-emitter voltage (V<sub>CEO) of 60V and a collector current (I<sub>C) of up to 1A, allowing it to manage moderate power levels in electronic circuits. Its gain bandwidth product (f<sub>T) is specified at 100MHz, providing sufficient frequency response for amplification purposes in a variety of applications such as signal processing and audio amplification.

With its high current gain (h<sub>FE), the BCP5516TA ensures efficient current amplification, making it an excellent choice for switching applications where fast and reliable operation is crucial. This feature, combined with its low saturation voltage, allows for reduced power loss and improved overall system efficiency.

Diodes Incorporated has designed the BCP5516TA with robustness in mind. It can handle continuous collector currents and intermittent peak currents without performance degradation, thanks to its sturdy construction and carefully selected materials. Additionally, it features built-in thermal and electrical safeguards, providing enhanced protection against overcurrent, overheating, and voltage spikes, which contributes to the longevity and reliability of the end product.

In summary, the BCP5516TA from Diodes Incorporated is a versatile, high-performance NPN bipolar transistor that is perfect for designers seeking a balance of power handling, efficiency, and compactness in their electronic designs. Whether used in amplification, switching, or general-purpose applications, the BCP5516TA is a reliable component that ensures stable operation and longevity.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.5249 $53.3715
80+ $1.2512 $100.0960
125+ $1.2121 $151.5125
175+ $1.1730 $205.2750
225+ $1.1339 $255.1275
300+ $1.0166 $304.9800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 14,500 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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