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JAN2N3421

Part No JAN2N3421
Manufacturer Microchip Technology
Catalog Transistors (BJT) - Single
Description TRANS NPN 80V 3A TO5
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Microchip Technology
Series Military, MIL-PRF-19500/393
Package Bulk
Product Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 3 A
Voltage - Collector Emitter Breakdown (Max) 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Current - Collector Cutoff (Max) 5µA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 1A, 2V
Power - Max 1 W
Frequency - Transition -
Temperature Range - Operating -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-205AA, TO-5-3 Metal Can
Supplier Device Package TO-5
Base Product Number 2N3421
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1378716-JAN2N3421
Ultra Librarian 3D Model Ultra Librarian JAN2N3421 CAD Model

Description

Microchip Technology JAN2N3421 NPN Transistor

The JAN2N3421 is a high-quality NPN bipolar junction transistor (BJT) from Microchip Technology, a leading provider of smart, connected, and secure embedded control solutions. This particular transistor is designed to meet rigorous standards and is part of the company's range of aerospace-grade products. It is suitable for a variety of applications, including switching and amplifier applications, where reliability and performance are critical.

Constructed with Microchip's advanced semiconductor technology, the JAN2N3421 offers excellent power handling capabilities. It can operate at high voltages, making it an ideal choice for power regulation circuits in demanding environments. The device is characterized by its fast switching speeds and high current gain (hFE), which ensures efficient performance in electronic circuits.

The JAN2N3421 comes in a robust, hermetically sealed package that guarantees its operation even under harsh conditions, such as those found in aerospace and military applications. This packaging not only provides superior reliability but also ensures long-term stability of the transistor's characteristics.

Key features of the JAN2N3421 include:

  • High voltage capability, which allows it to handle demanding power applications.
  • Fast switching speeds, enabling efficient performance in high-frequency circuits.
  • High current gain, which ensures a strong and stable amplification in analog circuits.
  • Hermetically sealed package for enhanced durability and reliability.
  • Qualified to aerospace standards, making it suitable for use in extreme environments.

This transistor is a testament to Microchip Technology's commitment to providing high-quality components that meet the stringent requirements of the aerospace industry. Whether for use in satellite systems, avionics, or military hardware, the JAN2N3421 offers the performance and reliability necessary for critical applications.

For detailed specifications, application notes, and additional information, engineers and product developers are encouraged to consult the datasheet provided by Microchip Technology. This will ensure the JAN2N3421 is used to its full potential in their designs.

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