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MJW21196

Part No MJW21196
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description Silicon Power Transistors | TRANS NPN 250V 16A TO247
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Transistor Type NPN
Current - Collector (Ic) (Maximum) 16A
Voltage - Collector Emitter Breakdown (Maximum) 250V
Vce Saturation (Maximum) at Ib, Ic 3V at 3.2A, 16A
Current - Collector Cutoff (Maximum) 100μA
DC Current Gain (hFE) (Minimum) at Ic, Vce 20 at 8A, 5V
Maximum Power 200W
Frequency - Transition 4MHz
Temperature Range - Operating -65°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-247-3
Supplier Device Package TO-247
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 1223813-MJW21196
Manufacturer Homepage www.onsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian MJW21196 CAD Model

Description

Introducing the MJW21196 Power Transistor by ON Semiconductor

The MJW21196 is a high-power, silicon NPN bipolar power transistor designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This robust transistor is specifically engineered to handle high power audio, disk head positioners, and other linear applications. With its exceptional performance and reliability, the MJW21196 stands out as a superior choice for designers and engineers looking to enhance their power management solutions.

Key Features of the MJW21196:

  • High Current Capacity: The transistor is capable of handling continuous collector currents up to 16 A, making it suitable for demanding applications that require a high current throughput.
  • High Voltage Tolerance: With a collector-emitter voltage (V<sub>CEO) of 250V, the MJW21196 can efficiently manage high voltage operations without compromising performance.
  • Excellent Gain Characteristics: It offers a high DC current gain (h<sub>FE) range from 15 to 60 at I<sub>C = 8 A, providing consistent amplification in various conditions.
  • Robust Power Dissipation: A power dissipation of 200W at 25°C ensures that the device can handle significant amounts of power without overheating, contributing to its overall durability and longevity.

Reliability and Construction:

The MJW21196 is constructed with ON Semiconductor's state-of-the-art manufacturing techniques, which include a triple diffused planar process for improved reliability and performance. The device is encapsulated in a fully isolated mounting base, enhancing thermal management and making it easier to install without additional insulation components. Its rugged design ensures stable operation even under extreme conditions, making it a trustworthy component for high-power applications.

Applications:

Due to its high power and current handling capabilities, the MJW21196 is ideal for a wide range of applications, including:

  • High fidelity audio amplifiers
  • Professional audio systems
  • Linear power supplies
  • Motor control circuits
  • Power inverters and converters

ON Semiconductor's commitment to quality ensures that the MJW21196 transistor not only meets but exceeds the stringent requirements of modern electronic applications. Whether you're designing high-end audio equipment or precise motor controllers, the MJW21196 is a reliable and efficient choice that will deliver consistent performance and durability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $5.5923 $67.1076
29+ $4.5884 $133.0636
44+ $4.4448 $195.5712
61+ $4.3012 $262.3732
78+ $4.1577 $324.3006
105+ $3.7281 $391.4505
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Availability: 7,000 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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