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DDTA113TKA-7-F

Part No DDTA113TKA-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 200MW SC59-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 1k
Typical Gain (hFE) (Min) 100 @ 1mA, 5V
Max Vce (sat) 300mV @ 1mA, 10mA
Collector Cut-off Current(Max) 500nA (ICBO)
Frequency - Transition 250MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package SC-59-3
Win Source Part Number 100364-DDTA113TKA-7-F
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DDTA113TKA-7-F CAD Model

Description

Introducing the DDTA113TKA-7-F from Diodes Incorporated

Diodes Incorporated presents the DDTA113TKA-7-F, a robust PNP pre-biased small signal transistor designed to deliver consistent performance for a wide array of electronic applications. This device is part of Diodes Incorporated's extensive range of transistor technologies, renowned for their reliability and efficiency.

The DDTA113TKA-7-F comes in a compact SOT-23 package, making it an excellent choice for space-constrained applications. Despite its small size, it offers a powerful performance with a continuous collector current of up to 500 mA, which makes it suitable for high-density circuit designs.

This transistor features a built-in resistor configuration which provides the convenience of a biasing resistor network, simplifying circuit design and reducing component count. The resistor values are optimized to ensure low saturation voltage and high input impedance, resulting in lower power consumption and improved energy efficiency.

Key specifications of the DDTA113TKA-7-F include a collector-emitter voltage (Vceo) of -50V, ensuring it can handle significant voltage levels in various applications. The device also boasts a collector-base voltage (Vcbo) of -50V and an emitter-base voltage (Vebo) of -5V, providing a wide operating range for designers to work with.

With its high gain bandwidth product and fast switching speeds, the DDTA113TKA-7-F is an ideal choice for amplification and switching applications. It is commonly used in signal processing, power management, and control systems, among other electronic circuits.

The device is also characterized by its low on-state resistance, contributing to its high efficiency and minimal power loss during operation. Furthermore, the DDTA113TKA-7-F is designed to meet stringent quality standards, offering excellent reliability and a long operational lifespan, which is vital for industrial and commercial applications requiring consistent performance over time.

For environmentally conscious designs, the DDTA113TKA-7-F complies with RoHS directives, making it a lead-free and environmentally friendly choice. Diodes Incorporated's commitment to sustainability is reflected in this product, ensuring that customers can design with both performance and ecological impact in mind.

In summary, the DDTA113TKA-7-F from Diodes Incorporated is a versatile, high-performance PNP transistor that is ideal for designers looking for a reliable, efficient, and compact solution for their electronic circuits.

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Pricing & Ordering

Quantity Unit Price Ext. Price
575+ $0.0874 $50.2550
1,395+ $0.0717 $100.0215
2,160+ $0.0695 $150.1200
2,980+ $0.0672 $200.2560
3,850+ $0.0650 $250.2500
5,150+ $0.0583 $300.2450
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,700 pieces
MOQ: 575 pcs
Order Increment : 1 pcs
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