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DDTC113TCA-7-F

Part No DDTC113TCA-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 200MW SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 1k
Typical Gain (hFE) (Min) 100 @ 1mA, 5V
Max Vce (sat) 300mV @ 1mA, 10mA
Collector Cut-off Current(Max) 500nA (ICBO)
Frequency - Transition 250MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package SOT-23-3
Win Source Part Number 000546-DDTC113TCA-7-F
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DDTC113TCA-7-F CAD Model

Description

Introducing the DDTC113TCA-7-F Transistor from Diodes Incorporated

The DDTC113TCA-7-F is a high-performance, pre-biased NPN transistor that comes in a compact SOT-23 package, expertly designed by Diodes Incorporated. This innovative semiconductor is engineered to offer exceptional functionality for a wide range of electronic applications, making it an ideal choice for designers seeking to optimize their circuit designs.

At the heart of the DDTC113TCA-7-F lies a robust transistor capable of delivering a continuous collector current of 500mA, which is impressive for its small size. This transistor is unique in that it integrates a bias resistor network, consisting of one NPN transistor and two resistors, simplifying circuit design by reducing component count. The resistors are precisely configured to ensure stable operation, making the device a perfect solution for applications requiring biasing without the hassle of external components.

The device boasts a collector-emitter voltage (V<sub>CEO) of 50V, which provides a good margin for various electronic designs, and a power dissipation of 150mW, allowing for reliable operation even in somewhat demanding environments. Additionally, the built-in resistors have values of 10kΩ for the base-emitter resistor (R<sub>1) and 10kΩ for the base-ground resistor (R<sub>2), which are optimized for most standard applications.

One of the key advantages of the DDTC113TCA-7-F is its space-saving SOT-23 package, which is highly favored in modern electronics where board space is at a premium. This makes the transistor an excellent choice for portable and miniaturized devices, such as wearables, mobile phones, and IoT devices.

Diodes Incorporated's commitment to quality is evident in the DDTC113TCA-7-F, which is designed to meet stringent industry standards for performance and reliability. Whether for use in switching applications, signal processing, or as a simple amplifier, this pre-biased transistor is a versatile component that can enhance the efficiency and functionality of a vast array of electronic circuits.

For designers and engineers looking for a reliable, high-performance pre-biased transistor that simplifies design and conserves space, the DDTC113TCA-7-F from Diodes Incorporated is an excellent choice that promises to deliver both quality and value.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,770+ $0.0283 $50.0910
3,775+ $0.0265 $100.0375
5,860+ $0.0256 $150.0160
8,405+ $0.0238 $200.0390
10,920+ $0.0229 $250.0680
13,640+ $0.0220 $300.0800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,980 pieces
MOQ: 1770 pcs
Order Increment : 1 pcs
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