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DMG4N65CT

Part No DMG4N65CT
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 650V 4A TO220-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Diodes Incorporated
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13.5 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 900 pF @ 25 V
Power Dissipation (Max) 2.19W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Base Product Number DMG4
Standard Package 50 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 585392-DMG4N65CT
Ultra Librarian 3D Model Ultra Librarian DMG4N65CT CAD Model

Description

DMG4N65CT N-Channel Enhancement Mode MOSFET by Diodes Incorporated

The DMG4N65CT is a state-of-the-art N-Channel enhancement mode MOSFET, meticulously designed and manufactured by Diodes Incorporated, a leading company in the semiconductor market. This MOSFET is a high-performance, power-efficient component, making it an ideal choice for a wide range of electronic applications.

With a drain-source voltage (VDS) of 650V, the DMG4N65CT is well-suited for high voltage operations, providing a robust platform for designers to work with. The device features a continuous drain current (ID) of 4A, which ensures that it can handle significant power without compromising on performance. This makes the DMG4N65CT a reliable component in power management tasks.

The DMG4N65CT boasts a low on-resistance (RDS(on)), which translates to reduced power loss and improved efficiency in circuit operation. This characteristic is crucial for applications that require low power consumption and minimal heat generation. The MOSFET's fast switching speed is another key attribute, enabling high-frequency operation while minimizing switching losses.

Encased in a TO-252 (DPAK) package, the DMG4N65CT is designed for compactness and durability. This packaging not only ensures a small footprint on the PCB but also provides excellent thermal performance, which is critical for maintaining reliability and longevity in challenging thermal environments.

The DMG4N65CT is also characterized by its high avalanche energy absorption capability, providing robustness against unexpected voltage spikes. It is equipped with a gate-source voltage (VGS) of ±30V, offering a wide margin for gate drive design and ensuring compatibility with a variety of gate drivers.

This MOSFET is RoHS compliant, reflecting Diodes Incorporated's commitment to environmental sustainability. It is suitable for various applications, including power supplies, lighting, motor drives, and other high-efficiency power conversion systems. With the DMG4N65CT, engineers and designers can expect a combination of high performance, reliability, and energy efficiency, making it an essential component in modern electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4897 $58.7640
290+ $0.4019 $116.5510
450+ $0.3892 $175.1400
615+ $0.3777 $232.2855
795+ $0.3650 $290.1750
1,065+ $0.3269 $348.1485
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 220 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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