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Same model may have multiple batches, images only for reference.
SSM6P35AFE,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM6P35AFE,LF

Part No SSM6P35AFE,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Toshiba Semiconductor and Storage
Series U-MOSVII
Package Tape & Reel
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate, 1.2V Drive
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 250mA (Ta)
Rds On (Max) @ Id, Vgs 1.4Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 100µA
Input Capacitance (Ciss) (Max) @ Vds 42pF @ 10V
Power - Max 150mW (Ta)
Temperature Range - Operating 150°C
Mounting SMD (SMT)
Package / Case SOT-563, SOT-666
Supplier Device Package ES6
Base Product Number SSM6P35
Other Names SSM6P35AFELFTR,SSM6P35AFE,LF(B,SSM6P35AFELFCT,SSM6P35AFELFDKR
Standard Package 4,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1278535-SSM6P35AFE,LF
Ultra Librarian 3D Model Ultra Librarian SSM6P35AFE,LF CAD Model

Description

The SSM6P35AFE,LF is a dual P-Channel MOSFET array from Toshiba Semiconductor and Storage.

  • Drain to Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id) @ 25°C: 250mA (Ta)
  • Maximum Rds On: 1.4Ohm @ 150mA and 4.5V
  • Power Max: 150mW (Ta)
  • Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 10V
  • Vgs(th) (Max) @ Id: 1V @ 100μA
  • Temperature Range: 150°C

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