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DMN7022LFGQ-13

Part No DMN7022LFGQ-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 23A POWERDI3333
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 51 Weeks
Features N-Channel 75 V 23A (Tc) 2W (Ta) Surface Mount PowerDI3333-8
Manufacturer Diodes Incorporated
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package 8-PowerVDFN
Case / Package PowerDI3333-8
Family Name DMN7022
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 3000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 869038-DMN7022LFGQ-13
Ultra Librarian 3D Model Ultra Librarian DMN7022LFGQ-13 CAD Model

Description

DMN7022LFGQ-13 - N-Channel Enhancement Mode Field Effect Transistor (MOSFET) by Diodes Incorporated

The DMN7022LFGQ-13 is a high-performance, N-channel enhancement mode field effect transistor (MOSFET) designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality semiconductor products. This MOSFET is engineered to cater to a broad range of applications, offering an excellent balance of on-resistance and gate charge, which translates into a highly efficient energy profile suitable for power management tasks.

With a drain-source voltage (V<sub>DS) of 20V and a continuous drain current (I<sub>D) of 6.5A, the DMN7022LFGQ-13 is capable of handling moderate power levels, making it well-suited for a variety of electronic applications, including but not limited to, load switches, power management circuits, and general-purpose switching applications. The device's low threshold voltage ensures a low gate drive requirement, thus facilitating its integration into low-voltage logic circuits.

Encased in a compact and environmentally friendly DFN2020 package, the DMN7022LFGQ-13 boasts excellent thermal performance, which is critical for maintaining stability and reliability in applications where the MOSFET is expected to operate at elevated temperatures. The package's small footprint also makes it an ideal choice for space-constrained applications.

Key features of the DMN7022LFGQ-13 include:

  • Low on-resistance (R<sub>DS(on)) which enhances overall efficiency by minimizing conduction losses.
  • High-speed switching capabilities, providing improved performance for high-frequency applications.
  • Gate-source voltage (V<sub>GS) of ±8V, offering robust gate protection and operational stability.
  • RoHS compliant and halogen-free, reflecting Diodes Incorporated's commitment to environmental sustainability.

The DMN7022LFGQ-13 is a testament to Diodes Incorporated's dedication to providing advanced semiconductor solutions that meet the evolving needs of the electronics industry. Whether you're designing power supplies, motor controllers, or any other system requiring efficient power management, the DMN7022LFGQ-13 stands out as a reliable and high-performing component that can help you achieve your design objectives with confidence.

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.6987 $59.3895
205+ $0.5733 $117.5265
315+ $0.5555 $174.9825
430+ $0.5375 $231.1250
560+ $0.5195 $290.9200
745+ $0.4659 $347.0955
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,950 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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