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DMP6185SK3-13

Part No DMP6185SK3-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 9.4A T0252
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 14nC @ 10V
Max Input Capacitance 708pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.6W (Ta)
Maximum Rds On at Id,Vgs 150 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1033873-DMP6185SK3-13
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMP6185SK3-13 CAD Model

Description

Product Overview: DMP6185SK3-13 from Diodes Incorporated

The DMP6185SK3-13 is a high-performance, P-Channel enhancement mode field effect transistor (FET) designed and manufactured by Diodes Incorporated, a leading global provider of high-quality semiconductor products. This MOSFET is a testament to Diodes Incorporated's commitment to providing energy-efficient and miniaturized solutions for a wide range of electronic applications.

Constructed with advanced trench technology, the DMP6185SK3-13 boasts a low on-resistance (R<sub>DS(on)) which significantly reduces conduction losses, making it an ideal choice for power management tasks. Its -60V drain-source breakdown voltage (V<sub>DSS) ensures that the device can handle high voltage operations, providing a robust solution for various circuit designs.

The device comes in a compact surface-mount package, specifically the PowerDI3333-8 type, which not only saves precious board space but also enhances thermal performance due to its excellent power dissipation capabilities. This makes the DMP6185SK3-13 well-suited for portable and space-constrained applications where efficiency and reliability are paramount.

Key features of the DMP6185SK3-13 include:

  • Low threshold voltage (V<sub>GS(th)) which facilitates ease of drive and operation at lower gate voltages.
  • Fast switching speed, enabling efficient operation at high frequencies, which is crucial for applications such as DC-DC converters and motor drives.
  • High continuous drain current (I<sub>D), allowing the device to handle substantial current loads without performance degradation.
  • RoHS compliance, ensuring that the product meets the latest environmental standards and regulations.

Applications for the DMP6185SK3-13 are diverse and include power management in portable devices, load switch circuits, battery management systems, and other power-intensive applications where efficiency is a key concern. Its reliability and performance characteristics also make it suitable for industrial and automotive environments, where robustness and long-term stability are required.

Overall, the DMP6185SK3-13 from Diodes Incorporated is a versatile and efficient solution for designers looking to optimize their power management systems with a high-quality P-Channel MOSFET that delivers both performance and miniaturization.

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.4937 $51.8385
250+ $0.4051 $101.2750
385+ $0.3924 $151.0740
530+ $0.3798 $201.2940
685+ $0.3671 $251.4635
915+ $0.3291 $301.1265
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,673 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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