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DMT8012LFG-7

Part No DMT8012LFG-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V PWRDI3333 / N-Channel 80 V 9.5A (Ta), 35A (Tc) 2.2W (Ta), 30W (Tc) Surface Mount PowerDI3333-8
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Diodes Incorporated
Packaging Reel - TR
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 9.5A, 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1949 pF @ 40 V
Power Dissipation (Max) 2.2W, 30W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Surface Mount
Supplier Device Package PowerDI3333-8
Case / Package 8-PowerVDFN
Base Product Number DMT8012
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number DMT8012LFG-7DICT,DMT8012LFG-7DIDKR,DMT8012LFG-7DITR
Standard Package 2,000
Win Source Part Number 1323905-DMT8012LFG-7
Ultra Librarian 3D Model Ultra Librarian DMT8012LFG-7 CAD Model

Description

DMT8012LFG-7 - A High-Performance MOSFET from Diodes Incorporated

The DMT8012LFG-7 is a state-of-the-art MOSFET device designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality semiconductor products. This MOSFET is part of the company's extensive portfolio of power management solutions, tailored to meet the requirements of modern electronic applications.

Key Features

  • Low On-Resistance: The DMT8012LFG-7 boasts an exceptionally low on-resistance (R<sub>DS(on)), which translates to reduced power loss and improved efficiency in operation. This feature makes it an ideal choice for power-intensive applications where minimizing energy waste is crucial.
  • High Power Density: With its compact footprint, the DMT8012LFG-7 provides a high power density, enabling designers to work with more power in a smaller space. This is particularly beneficial for portable and space-constrained applications.
  • Advanced Packaging: Utilizing the PowerDI®3333-8 package, the DMT8012LFG-7 ensures excellent thermal performance and a robust design, which is critical for maintaining reliability and longevity in harsh environments.
  • Lead-Free and RoHS Compliant: In line with environmental regulations and consumer safety concerns, this MOSFET is completely lead-free and RoHS compliant, making it an environmentally friendly choice for electronic products.

Applications

The versatility of the DMT8012LFG-7 allows it to be used across a wide range of applications, including but not limited to:

  • Power supply circuits
  • DC-DC converters
  • Load switches
  • Battery management systems
  • Motor drives

Technical Specifications

Key specifications of the DMT8012LFG-7 include:

  • Drain-Source Voltage (V<sub>DSS): 80V
  • Continuous Drain Current (I<sub>D): 8.5A
  • Pulsed Drain Current (I<sub>DM): 34A
  • Gate-Source Voltage (±V<sub>GS): ±20V
  • Thermal Resistance, Junction to Ambient (R<sub>θJA): 40°C/W

For detailed product information, datasheets, and support resources, customers are encouraged to visit the official Diodes Incorporated website or contact their local sales representative.

The DMT8012LFG-7 represents Diodes Incorporated's commitment to providing innovative, high-performance semiconductor solutions that enable energy-efficient and compact designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0804 $54.0200
115+ $0.8865 $101.9475
175+ $0.8588 $150.2900
245+ $0.8311 $203.6195
315+ $0.8034 $253.0710
420+ $0.7203 $302.5260
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 120,000 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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