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DMTH6010LPDQ-13

Part No DMTH6010LPDQ-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2NCH 60V 13.1A POWERDI / Mosfet Array 2 N-Channel (Dual) 60V 13.1A (Ta), 47.6A (Tc) 2.8W Surface Mount PowerDI5060-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Manufacturer Diodes Incorporated
Packaging Reel - TR
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 13.1A, 47.6A (Tc)
Rds On (Max) @ Id, Vgs 11mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2615pF @ 30V
Power - Max 2.8W
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Surface Mount
Case / Package 8-PowerTDFN
Supplier Device Package PowerDI5060-8
Base Product Number DMTH6010
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number DMTH6010LPDQ-13DIDKR,DMTH6010LPDQ-13-ND,DMTH6010LPDQ-13DITR,DMTH6010LPDQ-13DICT
Standard Package 2,500
Win Source Part Number 1324662-DMTH6010LPDQ-13
Ultra Librarian 3D Model Ultra Librarian DMTH6010LPDQ-13 CAD Model

Description

DMTH6010LPDQ-13 - A High-Efficiency Power MOSFET from Diodes Incorporated

The DMTH6010LPDQ-13 is a state-of-the-art power MOSFET brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor market. This MOSFET is designed to cater to the demanding needs of modern electronic applications, delivering both high efficiency and reliability. It is an ideal choice for a wide range of applications, including power management, switching regulators, and power conversion systems.

Key Features

  • Low RDS(on): The DMTH6010LPDQ-13 boasts an incredibly low on-resistance, which translates to reduced conduction losses and improved overall efficiency in power applications.
  • High Power Density: With its PowerDI5060-8 package, it offers a compact footprint without compromising on power handling capabilities, making it suitable for space-constrained applications.
  • High Continuous Drain Current: It supports a high continuous drain current (ID), ensuring that it can handle the demands of high-power applications.
  • Fast Switching Speed: The device is optimized for fast switching, which minimizes switching losses and makes it ideal for high-frequency power switching applications.
  • Thermal Management: Excellent thermal performance is a hallmark of this MOSFET, thanks to its advanced packaging technology, which aids in heat dissipation.

Product Specifications

The DMTH6010LPDQ-13 operates with a 60V drain-source voltage (VDS), which ensures that it can be used in a variety of high-voltage applications. Its maximum RDS(on) is as low as 10mΩ at a gate-source voltage of 10V, which is indicative of its high efficiency. The MOSFET comes in a halogen-free, RoHS-compliant package, making it an environmentally friendly choice for green technology solutions.

Applications

With its robust performance characteristics, the DMTH6010LPDQ-13 is well-suited for a range of applications, including:

  • DC/DC Converters
  • Power Supply Circuits
  • Motor Drives
  • Automotive Applications
  • Power Management in Computing and Telecom

Diodes Incorporated's commitment to quality and performance is evident in the DMTH6010LPDQ-13, making it a dependable choice for engineers and designers looking for a high-performance power MOSFET. Its combination of efficiency, speed, and thermal performance ensures that it stands out in the competitive field of power semiconductor products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3098 $52.3920
95+ $1.0747 $102.0965
145+ $1.0411 $150.9595
200+ $1.0075 $201.5000
260+ $0.9739 $253.2140
345+ $0.8732 $301.2540
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 90,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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