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FMMT625TA

Part No FMMT625TA
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS NPN 150V 1A SOT23-3 / Trans GP BJT NPN 150V 1A 625mW 3-Pin SOT-23 T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 150V
Max Vce (sat) 300mV @ 50mA, 1A
Collector Cut-off Current(Max) 100nA
Typical Gain (hFE) (Min) 300 @ 200mA, 10V
Maximum Power Dissipation 625mW
Frequency - Transition 135MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Win Source Part Number 016343-FMMT625TA
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name FMMT625
Introduction Date October 28, 1997
ECCN EAR99
Country of Origin China, Germany
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian FMMT625TA CAD Model

Description

Introducing the FMMT625TA Transistor from Diodes Incorporated

The FMMT625TA is a high-performance NPN bipolar junction transistor (BJT) designed and manufactured by the renowned semiconductor company, Diodes Incorporated. This versatile transistor is engineered to meet the requirements of a wide range of electronic applications, offering a perfect blend of efficiency, reliability, and performance.

At the heart of the FMMT625TA lies its ability to switch and amplify electronic signals with exceptional precision. With a collector-emitter voltage (VCEO) of 60V and collector current (IC) of up to 3A, it is well-suited for moderate power applications. This makes the FMMT625TA an excellent choice for power management tasks in both commercial and industrial environments.

The device comes in a compact SOT-23 package, which not only saves valuable board space but also ensures a low thermal footprint. This small form factor does not compromise its thermal and electrical performance, thanks to Diodes Incorporated's advanced semiconductor technology.

Key Features of the FMMT625TA:

  • High Current Capability: With a continuous collector current of 3A, the FMMT625TA can handle significant power for its size.
  • High Collector-Emitter Voltage: A VCEO of 60V allows for a wide range of operations in various circuit configurations.
  • High hFE: The device offers high current gain (hFE), ensuring efficient current amplification in the active region.
  • Low Saturation Voltage: This feature reduces power loss and improves efficiency, particularly in switching applications.
  • Fast Switching Speeds: The transistor is capable of fast switching, which is critical for high-frequency operations.
  • RoHS Compliant: The FMMT625TA meets RoHS standards, making it an environmentally friendly choice for electronic designs.

Applications for the FMMT625TA are diverse, ranging from switching and amplification in audio devices, signal processing, power regulation, and driver circuits in computing to control systems in automotive technology. Its robustness also makes it suitable for harsh environments where reliability is paramount.

With the FMMT625TA, designers can expect a high-quality, high-performance component that reflects Diodes Incorporated's commitment to excellence. Whether you're developing power supplies, motor controllers, or sophisticated signal processing equipment, the FMMT625TA is a transistor that can help you achieve your design goals with confidence.

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.2911 $50.9425
420+ $0.2389 $100.3380
650+ $0.2314 $150.4100
895+ $0.2239 $200.3905
1,155+ $0.2165 $250.0575
1,550+ $0.1941 $300.8550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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