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FZT1049ATA

Part No FZT1049ATA
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS NPN 25V 5A SOT-223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 5A
VCEO Maximum Collector-Emitter Breakdown Voltage 25V
Max Vce (sat) 330mV @ 50mA, 5A
Collector Cut-off Current(Max) 10nA
Typical Gain (hFE) (Min) 300 @ 1A, 2V
Maximum Power Dissipation 2.5W
Frequency - Transition 180MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Win Source Part Number 067584-FZT1049ATA
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FZT1049ATA CAD Model

Description

Introducing the FZT1049ATA - A High-Performance Transistor from Diodes Incorporated

The FZT1049ATA is a cutting-edge bipolar junction transistor (BJT) brought to you by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This transistor is designed to meet the needs of modern electronic circuits, providing a combination of high efficiency, reliability, and performance.

With its SOT-223 packaging, the FZT1049ATA offers a compact footprint that is ideal for space-constrained applications. It is a PNP transistor, which means it is optimized for use as a switch or amplifier in circuits where a negative current is to be controlled. The device is capable of handling continuous collector currents up to 5A, making it suitable for a wide range of power applications.

The FZT1049ATA boasts an impressive collector-emitter voltage (V<sub>CEO) of -30V, ensuring it can withstand significant voltage levels without succumbing to breakdown. Additionally, the collector-base voltage (V<sub>CBO) of -30V and emitter-base voltage (V<sub>EBO) of -5V further contribute to its robust performance in demanding situations.

One of the standout features of the FZT1049ATA is its high gain-bandwidth product, which is typically 190MHz. This characteristic makes it an excellent choice for high-frequency applications, including signal amplification and processing. Moreover, the device's power dissipation is rated at 3W, allowing it to handle substantial power levels without overheating.

Diodes Incorporated has designed the FZT1049ATA with a focus on quality and reliability. The transistor is RoHS compliant, ensuring it meets the latest environmental standards and regulations. It is also characterized by a low saturation voltage, which minimizes power loss and improves overall efficiency in circuit operation.

In summary, the FZT1049ATA from Diodes Incorporated is an exceptional transistor choice for designers and engineers looking to enhance their electronic designs. Whether it's for amplification, switching, or any other power-related application, this BJT is engineered to deliver top-notch performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.5387 $51.1765
230+ $0.4420 $101.6600
355+ $0.4282 $152.0110
485+ $0.4144 $200.9840
625+ $0.4006 $250.3750
840+ $0.3591 $301.6440
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 28,100 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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