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MMBT6427-7-F

Part No MMBT6427-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS NPN DARL 40V 0.5A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Darlington
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 1.5V @ 500μA, 500mA
Collector Cut-off Current(Max) 1μA
Typical Gain (hFE) (Min) 20000 @ 100mA, 5V
Maximum Power Dissipation 300mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Win Source Part Number 041723-MMBT6427-7-F
Ultra Librarian 3D Model Ultra Librarian MMBT6427-7-F CAD Model

Description

Product Overview: MMBT6427-7-F from Diodes Incorporated

The MMBT6427-7-F is a high-performance NPN bipolar junction transistor (BJT) designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality semiconductor products. This transistor is part of Diodes Incorporated's broad range of discrete, logic, analog, and mixed-signal components that cater to a wide array of electronic applications.

Constructed with state-of-the-art technology, the MMBT6427-7-F offers an excellent combination of low voltage operation and high current handling capabilities. It is suitable for amplification and switching applications, making it a versatile choice for designers working on a variety of electronic circuits. This component is particularly useful in situations where space is at a premium, thanks to its compact SOT-23 package, which is not only space-saving but also allows for efficient thermal management.

The MMBT6427-7-F boasts a collector-emitter voltage (VCEO) of 300V, which enables it to handle higher voltage applications with ease. The collector current (IC) rating of 500mA further enhances its ability to drive loads in a circuit. Its transition frequency (fT) of 50MHz is indicative of its quick response capabilities, making it suitable for high-frequency operations.

For added reliability, the MMBT6427-7-F features a continuous collector current at a specified temperature, ensuring stable performance across various environmental conditions. The device also includes built-in thermal shutdown protection, safeguarding it against excessive temperature rise that could otherwise compromise its performance or longevity.

Diodes Incorporated has designed the MMBT6427-7-F with an emphasis on quality and dependability, which is reflected in its compliance with the RoHS and Green standards. This ensures that the product is free from harmful substances, making it an environmentally responsible choice for electronic manufacturers focused on sustainability.

In summary, the MMBT6427-7-F from Diodes Incorporated is a reliable and efficient NPN transistor that offers a balance of high voltage and current capabilities within a small footprint. Its robust design and compliance with environmental standards make it an ideal choice for a wide range of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
635+ $0.0793 $50.3555
1,540+ $0.0651 $100.2540
2,385+ $0.0630 $150.2550
3,280+ $0.0610 $200.0800
4,240+ $0.0590 $250.1600
5,675+ $0.0529 $300.2075
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 635 pcs
Order Increment : 1 pcs
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