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MMBTA28-7-F

Part No MMBTA28-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description Trans Darlington NPN 80V 0.5A 300mW 3-Pin SOT-23 T/R / TRANS NPN DARL 80V 0.5A SOT23-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Darlington
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 80V
Max Vce (sat) 1.5V @ 100μA, 100mA
Collector Cut-off Current(Max) 500nA
Typical Gain (hFE) (Min) 10000 @ 100mA, 5V
Maximum Power Dissipation 300mW
Frequency - Transition 125MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Win Source Part Number 023796-MMBTA28-7-F
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name MMBTA28
Introduction Date January 23, 2003
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian MMBTA28-7-F CAD Model

Description

Product Overview: MMBTA28-7-F from Diodes Incorporated

The MMBTA28-7-F is a high-performance PNP bipolar junction transistor (BJT) designed and manufactured by Diodes Incorporated, a leading global provider of discrete, logic, analog, and mixed-signal semiconductors. This transistor is part of Diodes Incorporated's extensive range of transistor products, known for their reliability and efficiency in various electronic applications.

The MMBTA28-7-F is housed in a compact SOT-23 surface-mount package, which makes it an ideal choice for space-constrained applications. This small form factor, combined with the transistor's low on-state voltage and high current handling capability, allows for its integration into a wide array of electronic circuits without compromising performance or taking up significant board space.

With a collector-emitter voltage (Vceo) of -80V and a collector current (Ic) rating of -500mA, the MMBTA28-7-F is capable of handling moderate power levels, making it suitable for amplification and switching applications. Additionally, the device features a collector-base voltage (Vcbo) of -80V and an emitter-base voltage (Vebo) of -5V, providing a good safety margin for various operating conditions.

The MMBTA28-7-F also boasts a low collector-emitter saturation voltage, which ensures lower power dissipation during operation. This characteristic is particularly beneficial in battery-powered devices, where energy efficiency is paramount. Moreover, the device's high current gain bandwidth product (fT) enables it to perform well in high-frequency applications, such as RF amplifiers and oscillators.

Diodes Incorporated has designed the MMBTA28-7-F with an emphasis on quality and reliability. It features a robust construction that can withstand the rigors of industrial environments, including high temperatures and mechanical stress. The device is also characterized by its excellent linearity, making it a preferred choice for audio amplification and other applications where signal fidelity is crucial.

In summary, the MMBTA28-7-F PNP transistor from Diodes Incorporated is a versatile and efficient component that provides designers with a high-performance solution for a variety of electronic circuits. Its compact size, power handling capabilities, and reliability make it an excellent choice for both new designs and as a drop-in replacement in existing applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
345+ $0.1456 $50.2320
840+ $0.1195 $100.3800
1,300+ $0.1157 $150.4100
1,790+ $0.1120 $200.4800
2,310+ $0.1083 $250.1730
3,090+ $0.0971 $300.0390
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 327,057 pieces
MOQ: 345 pcs
Order Increment : 1 pcs
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