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ZXM61P03FTA

Part No ZXM61P03FTA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 1.1A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 4.8nC @ 10V
Max Input Capacitance 140pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 625mW (Ta)
Maximum Rds On at Id,Vgs 350 mOhm @ 600mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 036919-ZXM61P03FTA
Family Name ZXM61P03F
Introduction Date July 22, 1999
ECCN EAR99
Country of Origin China, Germany
Halogen Free Compliant
Estimated EOL Date 2025
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian ZXM61P03FTA CAD Model

Description

Overview of ZXM61P03FTA from Diodes Incorporated

The ZXM61P03FTA is a high-performance P-channel MOSFET designed and manufactured by Diodes Incorporated, a leading global provider of discrete, analog, and logic semiconductors. This MOSFET is a reliable and efficient solution for a wide range of power management applications.

Key Features

  • Voltage Rating: The ZXM61P03FTA operates at a drain-source voltage (VDS) of -30V, making it suitable for various circuit applications.
  • Current Handling: With a continuous drain current (ID) of -1.8A, this MOSFET can handle significant power for its size.
  • Low On-Resistance: The device features a low on-resistance (RDS(on)) of 0.2Ω at VGS = -10V, ensuring efficient operation with minimal power loss.
  • Power Dissipation: It has a power dissipation (PD) of 1.25W, allowing it to sustain moderate power levels.
  • Package: The MOSFET comes in a small SOT-23 package, which is ideal for space-constrained applications.
  • High-Speed Switching: Designed for fast switching applications, the ZXM61P03FTA provides efficient performance with reduced switching losses.

Applications

The versatility of the ZXM61P03FTA makes it suitable for a variety of applications, including:

  • Power management circuits
  • Load switches
  • Battery management systems
  • DC-DC converters
  • Motor control circuits

Quality and Reliability

Diodes Incorporated is committed to delivering high-quality products. The ZXM61P03FTA MOSFET is built with rigorous standards to ensure reliability and performance consistency. Its robust construction makes it capable of withstanding challenging conditions, while its advanced design provides superior thermal performance and longevity.

Conclusion

The ZXM61P03FTA P-channel MOSFET by Diodes Incorporated is a compact, efficient, and reliable component that offers excellent performance for a wide range of electronic applications. Its low on-resistance, high current capability, and fast switching speeds make it an ideal choice for designers looking to enhance power management in their circuits.

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Pricing & Ordering

Quantity Unit Price Ext. Price
320+ $0.1573 $50.3360
775+ $0.1291 $100.0525
1,200+ $0.1250 $150.0000
1,655+ $0.1210 $200.2550
2,140+ $0.1170 $250.3800
2,860+ $0.1049 $300.0140
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 105,000 pieces
MOQ: 320 pcs
Order Increment : 1 pcs
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