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Same model may have multiple batches, images only for reference.
FDB0300N1007L Real Image
Same model may have multiple batches, images only for reference.

FDB0300N1007L

Part No FDB0300N1007L
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 200A TO263-7 / N-Channel 100 V 200A (Tc) 3.8W (Ta), 250W (Tc) Surface Mount TO-263-7
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Fairchild Semiconductor
Packaging Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 3mOhm @ 26A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 113 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8295 pF @ 50 V
Power Dissipation (Max) 3.8W, 250W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Surface Mount
Supplier Device Package TO-263-7
Case / Package TO-263-7, D²Pak (6 Leads + Tab)
ECCN EAR99
HTSUS 8542.39.0001
Other Part Number 2156-FDB0300N1007L,ONSFSCFDB0300N1007L
Standard Package 1
Win Source Part Number 1324732-FDB0300N1007L
Ultra Librarian 3D Model Ultra Librarian FDB0300N1007L CAD Model

Description

The Fairchild Semiconductor FDB0300N1007L is an N-channel MOSFET transistor.

  • Package: TO-263-7
  • Mounting Technology: Surface Mount
  • Drain to Source Voltage (Vdss): 100 V
  • Continuous Drain Current (Id): 200A (Tc) @ 25°C
  • On-Resistance (Rds On): 3mOhm @ 26A, 10V
  • Gate-Source Voltage (Vgs(th)): 4V @ 250μA
  • Gate Charge (Qg): 113 nC @ 10 V
  • Input Capacitance (Ciss): 8295 pF @ 50 Vds
  • Power Dissipation (Max): 3.8W, 250W (Tc)
  • Operating Temperature: -55°C to 175°C (TJ)
  • ECCN: EAR99 compliant
  • Ideal for: use in various applications, including power supplies, motor control, and lighting.

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