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FQP3P20 Fairchild/ON Semiconductor FQP3P20 Real Image
Same model may have multiple batches, images only for reference.
FQP3P20 Fairchild/ON Semiconductor FQP3P20 Real Image
FQP3P20 Fairchild/ON Semiconductor FQP3P20 Real Image
Same model may have multiple batches, images only for reference.

FQP3P20

Part No FQP3P20
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 200V 2.8A TO-220
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 8nC @ 10V
Max Input Capacitance 250pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 52W (Tc)
Maximum Rds On at Id,Vgs 2.7 Ohm @ 1.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1039850-FQP3P20
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian FQP3P20 CAD Model

Description

The Fairchild/ON Semiconductor 1039850-FQP3P20 is a P-channel MOSFET with a maximum drain-source breakdown voltage of 200V and a continuous drain current of 2.8A @ 25°C.

  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 2.8A @ 25°C
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 8nC @ 10V
  • Maximum Rds On: 2.7 Ohm @ 1.4A, 10V
  • Package: TO-220AB
  • Packaging: Tube/rail
  • Quantity per Package: 1k pieces

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Quantity Unit Price Ext. Price
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35+ $3.3368 $116.7880
54+ $3.2328 $174.5712
74+ $3.1289 $231.5386
96+ $3.0249 $290.3904
128+ $2.7119 $347.1232
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Availability: 4,870 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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