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Same model may have multiple batches, images only for reference.
FDB8160_F085 Real Image
Same model may have multiple batches, images only for reference.

FDB8160_F085

Part No FDB8160_F085
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 80A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 243nC @ 10V
Max Input Capacitance 11825pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 254W (Tc)
Maximum Rds On at Id,Vgs 1.8 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1037981-FDB8160_F085
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDB8160_F085 CAD Model

Description

The Fairchild/ON Semiconductor 1037981-FDB8160_F085 is an N-channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 80A @ 25°C.

  • Type: N-channel MOSFET
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 80A
  • Maximum Power Dissipation: 254W
  • Drive Voltage: 10V
  • Maximum Rds on @ Id,Vgs: 1.8 mOhm @ 80A, 10V
  • Package: D2PAK (TO-263AB)
  • Application: Discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.0582 $61.7460
70+ $1.6886 $118.2020
110+ $1.6355 $179.9050
150+ $1.5835 $237.5250
190+ $1.5304 $290.7760
255+ $1.3721 $349.8855
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Availability: 20,300 pieces
MOQ: 30 pcs
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