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FDD5N50TF

Part No FDD5N50TF
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Series PowerTrench®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 640 pF @ 25 V
Power Dissipation (Max) 40W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Standard Package 100 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 918999-FDD5N50TF
Ultra Librarian 3D Model Ultra Librarian FDD5N50TF CAD Model

Description

The FDD5N50TF is an N-Channel MOSFET manufactured by Fairchild/ON Semiconductor.

  • Category: Discrete Semiconductor Products
  • Sub-Category: Transistors - FETs, MOSFETs - Single FETs, MOSFETs
  • Package: bulk
  • Standard Package Quantity: 100 pieces
  • Drain-to-Source Voltage: 500 V
  • Continuous Drain Current: 4A @ 25°C
  • On-Resistance: 1.4 Ohm @ 2A and 10V gate-source voltage
  • Threshold Voltage: 5V @ 250 µA
  • Maximum Power Dissipation: 40W @ case temperature
  • Mounting: surface mount
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Gate Charge: 15 nC @ 10V gate-source voltage
  • Input Capacitance: 640 pF @ 25V drain-source voltage
  • Maximum Gate-Source Voltage: ±30V
  • Operating Temperature Range: -55°C to 150°C
  • Status: active product

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