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Same model may have multiple batches, images only for reference.
FDD6676S Real Image
Same model may have multiple batches, images only for reference.

FDD6676S

Part No FDD6676S
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Series PowerTrench®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 78A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 5 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 4770 pF @ 15 V
Power Dissipation (Max) 1.3W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 591088-FDD6676S
Ultra Librarian 3D Model Ultra Librarian FDD6676S CAD Model

Description

The FDD6676S is a N-Channel MOSFET transistor designed for use in discrete semiconductor products such as FETs and MOSFETs.

  • Series: PowerTrench
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Drain to Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 78A @ 25°C
  • Maximum Rds On: 6mOhm @ 16A and 10V
  • Gate Charge (Qg): 58nC @ 5V
  • Input Capacitance (Ciss): 4770pF @ 15V
  • Operating Temperature Range: -55°C to 150°C
  • Power Dissipation: 1.3W
  • Supplier: Fairchild/ON Semiconductor
  • Status: Active

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555+ $0.6260 $347.4300
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