The FDG313N-NL is an N-Channel Logic Level enhancement mode MOSFET produced by Fairchild Semiconductor, now part of ON Semiconductor. This MOSFET is designed for low voltage, low current switching applications where gate drive voltage is limited.

Applications

• Low-Side Load Switching
• Portable Equipment
• Battery-Powered Systems
• Logic Level Interface
• Solid State Relays
• Small Signal Switching

Features

• N-Channel MOSFET
• Logic Level Gate Drive
• Low On-Resistance (RDS(on)) at Low VGS
• Low Gate Charge (Qg)
• Fast Switching Speed
• Small SOT-23 Package
• RoHS Compliant

Benefits

• Easy to Drive with Logic Level Signals
• Efficient Switching Performance
• Reduces Power Loss in Low Voltage Applications
• Simplified Gate Drive Circuitry
• Compact Design for Space-Constrained Applications
• Environmentally Friendly
• Enhances Battery Life

Technical Specifications

The FDG313N-NL is an N-Channel enhancement mode MOSFET designed for logic-level gate drive. It features a low on-resistance (RDS(on)) at low gate-source voltages (VGS), enabling efficient switching even with limited gate drive. The drain-source voltage (VDS) is typically around 25V. The gate-source voltage (VGS) for full enhancement is relatively low, typically 2.5V to 4.5V. It has a low gate charge (Qg), which reduces the drive power needed. It provides fast switching speeds, minimizing switching losses. It is packaged in a small SOT-23 package, enabling compact designs. It is RoHS compliant, meeting environmental standards.

The FDG313N-NL is ideal for applications where the gate drive voltage is limited, such as in battery-powered systems and portable equipment. The low on-resistance at low VGS minimizes power loss and improves efficiency. The logic-level gate drive simplifies the design of gate drive circuits and allows for direct interfacing with microcontrollers and other digital logic devices. The fast switching speed reduces switching losses, further improving efficiency. Its compact size makes it suitable for space-constrained applications. It is commonly used for low-side load switching and as a logic-level interface. The MOSFET is well-suited to battery-powered devices, and other applications where efficient switching with a low gate voltage is required.