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FDN363N

Part No FDN363N
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Series PowerTrench®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 240mOhm @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.2 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 25 V
Power Dissipation (Max) 500mW (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SuperSOT™-3
Package / Case TO-236-3, SC-59, SOT-23-3
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 871672-FDN363N
Ultra Librarian 3D Model Ultra Librarian FDN363N CAD Model

Description

The 871672-FDN363N is an N-Channel MOSFET transistor from Fairchild/ON Semiconductor. It is part of the PowerTrench® series and is designed for use in discrete semiconductor products.

  • This MOSFET has a drain to source voltage (Vdss) of 100V and a continuous drain current (Id) of 1A @ 25°C.
  • It features a maximum on-resistance (Rds On) of 240mOhm @ 1A and 10V, ensuring efficient power distribution.
  • The 871672-FDN363N is a surface mount device with a TO-236-3, SC-59, SOT-23-3 package.
  • It has a gate charge (Qg) of 5.2nC @ 10V and an input capacitance (Ciss) of 200pF @ 25V.
  • Operating in a temperature range of -55°C to 150°C, this MOSFET has a maximum gate-source voltage (Vgs) of ±20V.
  • It is suitable for a wide range of applications in the electronics industry.

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