The Fairchild/ON Semiconductor FDS2170N3 is an N-channel MOSFET designed for discrete semiconductor products. This SMD (SMT) device is now obsolete (EOL).

• Power Dissipation (Max): 3W
• Drain-Source Breakdown Voltage: 200V
• Continuous Drain Current: 3A (Ta) @ 25°C
• Gate-Source Threshold Voltage: 4.5V @ 250μA
• Gate-Source Voltage (Max): ±20V
• Rds On (Max): 128 mOhm @ 3A, 10V
• Package: 8-SOIC, 0.154" Width, 3.90mm Width
• Input Capacitance (Max): 1292pF @ 100V
• Gate Charge (Max): 36nC @ 10V
• Popularity: Medium
• Manufacturer Package: 14-TSSOP