The FDS9936NL is a 20V Complementary MOSFET from Fairchild Semiconductor (now ON Semiconductor) featuring both an N-Channel and a P-Channel MOSFET in a single SO-8 package. It's designed for various power management and switching applications where space and efficiency are critical.

Applications:

• Load switching
• Power management in portable devices
• DC-DC converters
• Battery charging circuits

Features:

• Complementary N-Channel and P-Channel MOSFETs
• Low on-resistance (RDS(on)) for both channels
• Logic-level gate drive
• Small SO-8 package
• RoHS Compliant

Benefits:

• Reduced component count and board space.
• Simplified gate drive circuitry, compatible with low-voltage logic.
• Efficient power conversion.
• Ideal for space-constrained applications.

Specifications:

The FDS9936NL contains an N-Channel MOSFET with a drain-source voltage (VDS) of 20V and a continuous drain current (ID) of 2.8A. The on-resistance (RDS(on)) is typically 0.070 Ohms at VGS = 4.5V. The P-Channel MOSFET features a drain-source voltage (VDS) of -20V and a continuous drain current (ID) of -2.3A. The on-resistance (RDS(on)) is typically 0.120 Ohms at VGS = -4.5V. The device is packaged in an SO-8 package.

This complementary MOSFET offers a compact solution for power management and switching applications. By integrating both an N-Channel and a P-Channel MOSFET in a single package, the FDS9936NL saves valuable board space and reduces component count. The logic-level gate drive simplifies the design process, and the low on-resistance ensures efficient operation.