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Same model may have multiple batches, images only for reference.
FDW252P Real Image
Same model may have multiple batches, images only for reference.

FDW252P

Part No FDW252P
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 8.8A 8-TSSOP
Datasheet
FDW252P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 8.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 66nC @ 4.5V
Max Input Capacitance 5045pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.3W (Ta)
Maximum Rds On at Id,Vgs 12.5 mOhm @ 8.8A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Dimension 8-TSSOP (0.173", 4.40mm Width)
Win Source Part Number 067125-FDW252P
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDW252P CAD Model

Description

The Fairchild/ON Semiconductor FDW252P is a P-channel MOSFET.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current (25°C): 8.8A
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Maximum Gate Charge: 66nC @ 4.5V
  • Maximum Rds On (Id,Vgs): 12.5 mOhm @ 8.8A, 4.5V
  • Package: 8-TSSOP (0.173", 4.40mm width)
  • Application: Discrete Semiconductor Products
  • Popularity: Medium
  • Supply and Demand: Balanced

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95+ $1.2677 $120.4315
145+ $1.2282 $178.0890
195+ $1.1885 $231.7575
255+ $1.1489 $292.9695
340+ $1.0300 $350.2000
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