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Same model may have multiple batches, images only for reference.
FQA9N90_F109 Real Image
Same model may have multiple batches, images only for reference.

FQA9N90_F109

Part No FQA9N90_F109
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 8.6A TO-3P
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 900V
Continuous Drain Current at 25°C 8.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 72nC @ 10V
Max Input Capacitance 2700pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 240W (Tc)
Maximum Rds On at Id,Vgs 1.3 Ohm @ 4.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3PN
Dimension TO-3P-3, SC-65-3
Win Source Part Number 131042-FQA9N90_F109
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQA9N90_F109 CAD Model

Description

The FQA9N90_F109 is an N-channel MOSFET manufactured by Fairchild/ON Semiconductor.

  • Power Dissipation: 240W (Tc)
  • Drain-Source Breakdown Voltage: 900V
  • Supply and Demand: Limited
  • Package: TO-3PN
  • Rds On (Max): 1.3 Ohm @ 4.3A, 10V

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37+ $3.1312 $115.8544
58+ $3.0330 $175.9140
79+ $2.9349 $231.8571
102+ $2.8378 $289.4556
137+ $2.5433 $348.4321
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Availability: 29,000 pieces
MOQ: 16 pcs
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