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Same model may have multiple batches, images only for reference.
FQB12P20TM Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQB12P20TM

Part No FQB12P20TM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 200V 11.5A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 1200pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 3.13W (Ta), 120W (Tc)
Maximum Rds On at Id,Vgs 470 mOhm @ 5.75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 107903-FQB12P20TM
Popularity Medium
Supply and Demand Status Balance
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian FQB12P20TM CAD Model

Description

This MOSFET is a high-quality component that is designed to provide reliable performance in a wide range of applications.

  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 11.5A
  • Designed for high-power applications with ease.
  • Tested for reliability and stability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
26+ $1.9791 $51.4566
62+ $1.6239 $100.6818
96+ $1.5732 $151.0272
132+ $1.5224 $200.9568
170+ $1.4717 $250.1890
228+ $1.3194 $300.8232
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,492 pieces
MOQ: 26 pcs
Order Increment : 1 pcs
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