The FQB1P50 is a P-Channel enhancement mode power MOSFET from Fairchild Semiconductor (now ON Semiconductor), designed for high-voltage, high-current switching applications. It provides a combination of low on-resistance and fast switching speeds, making it suitable for various power management and control circuits.

Applications

• High-voltage DC-DC converters
• Power inverters
• Solid-state relays
• Motor control circuits
• Lighting control

Features

• P-Channel enhancement mode MOSFET
• High drain-source voltage (VDS) rating of -500V
• Low on-resistance (RDS(on))
• Fast switching speed
• High avalanche ruggedness

Benefits

• Enables efficient power conversion in high-voltage applications
• Reduces power losses and improves thermal performance
• Offers robust performance in demanding switching environments
• Simplifies circuit design

Specifications

The FQB1P50 features a drain-source voltage (VDS) of -500V, a gate-source voltage (VGS) of ±30V, and a continuous drain current (ID) of -1.2A. The on-resistance (RDS(on)) is typically 6.5 Ohms at VGS = -10V. It's usually available in a TO-263 (D2PAK) package, facilitating efficient heat dissipation. This MOSFET is also designed to withstand high energy during avalanche breakdown, enhancing its reliability in inductive switching applications.