The FQD2N60C is an N-Channel MOSFET from Fairchild Semiconductor (now ON Semiconductor). It is designed for high-voltage, high-speed switching applications. This MOSFET utilizes Fairchild's CoolMOS® technology, resulting in low on-resistance (RDS(on)) and significantly reduced gate charge (Qg) and switching losses. The 'C' suffix often indicates a CoolMOS® variant optimized for specific performance characteristics.

Applications

• Switch Mode Power Supplies (SMPS)
• Power Factor Correction (PFC) circuits
• Electronic Ballasts
• AC-DC Converters

Features

• Low on-resistance (RDS(on))
• Fast switching speed
• Low gate charge (Qg)
• High avalanche ruggedness
• 600V drain-source voltage (VDS)
• 2A continuous drain current (ID)

Benefits

• High efficiency in power conversion due to low RDS(on)
• Reduced switching losses
• Simplified gate drive requirements
• Robust performance in demanding conditions
• Suited for high-voltage applications

Additional Details

The FQD2N60C typically comes in a TO-252 (DPAK) or TO-251 (IPAK) package, enabling efficient heat dissipation. Its high voltage rating and low on-resistance make it suitable for off-line power supplies and other applications requiring high voltage and efficiency. The CoolMOS® technology ensures minimal switching losses and contributes to good EMI performance. The drain-source voltage (VDS) is rated at 600V, and the continuous drain current (ID) is 2A at a case temperature of 25°C. The device is designed to withstand repetitive avalanche breakdown events, enhancing reliability.