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FQD2N60CS

Part No FQD2N60CS
Manufacturer Fairchild/ON Semiconductor
Catalog Miscellaneous
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Manufacturer Fairchild/ON Semiconductor
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 823541-FQD2N60CS
Ultra Librarian 3D Model Ultra Librarian FQD2N60CS CAD Model

Description

The FQD2N60CS is an N-Channel enhancement mode power MOSFET manufactured by Fairchild Semiconductor, now part of ON Semiconductor. This MOSFET is engineered with Fairchild's advanced QFET® technology, enabling a combination of low on-resistance, high switching speed, and ruggedness. It is optimized for applications requiring efficient power conversion and reliable performance.

Applications:

  • Switch Mode Power Supplies (SMPS)
  • Power Factor Correction (PFC) circuits
  • Electronic Ballasts
  • Battery Chargers
  • Adapters

Features:

  • Low on-resistance (RDS(on)) minimizes conduction losses
  • Fast switching speed reduces switching losses
  • Low gate charge (Qg) simplifies gate drive design
  • High avalanche energy capability enhances reliability
  • Improved dv/dt ruggedness ensures stable operation
  • 600V Drain to Source Voltage (VDS)
  • 2A Continuous Drain Current (ID)

Benefits:

  • Enhanced energy efficiency due to reduced power dissipation
  • Improved system performance with faster switching speeds
  • Simplified gate drive circuitry due to low gate charge
  • Increased system reliability through high avalanche energy and improved dv/dt capability
  • Reduced heat sink requirements due to lower power losses

Additional Details:

The FQD2N60CS is typically packaged in a TO-252 (DPAK) package, which facilitates surface mounting. The high voltage rating makes it suitable for high voltage power conversion applications. The gate threshold voltage is carefully controlled for consistent performance. It can operate at junction temperatures up to 150°C, ensuring robust performance under various operating conditions. The fast body diode recovery time enhances performance in bridge circuits and synchronous rectification. The MOSFET's design minimizes parasitic elements, improving switching characteristics and reducing electromagnetic interference (EMI). It offers a cost-effective solution for applications that require high voltage capability and efficient power management. The FQD2N60CS is designed for optimal performance in hard-switching topologies. It provides designers with a reliable and efficient solution for a wide range of power electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8125 $52.8125
150+ $0.6667 $100.0050
235+ $0.6459 $151.7865
320+ $0.6250 $200.0000
415+ $0.6042 $250.7430
555+ $0.5417 $300.6435
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 100 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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