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Same model may have multiple batches, images only for reference.
FQD6N50CTF Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQD6N50CTF

Part No FQD6N50CTF
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 4.5A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 700pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 61W (Tc)
Maximum Rds On at Id,Vgs 1.2 Ohm @ 2.25A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 040337-FQD6N50CTF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2k pcs
Ultra Librarian 3D Model Ultra Librarian FQD6N50CTF CAD Model

Description

The Fairchild/ON Semiconductor 040337-FQD6N50CTF is a MOSFET N-Channel discrete semiconductor product.

  • Mounting: SMD (SMT)
  • Power Dissipation: 2.5W (Ta), 61W (Tc)
  • Drive Voltage: 10V
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current (Tc=25°C): 4.5A
  • Gate-Source Threshold Voltage (Id=250μA): 4V
  • Maximum Gate Charge (Vgs=10V): 25nC
  • Maximum Input Capacitance (Vds=25V): 700pF
  • Package: D-Pak (TO-252-3, DPak (2 Leads + Tab), SC-63)
  • Supply and Demand Status: Balanced
  • Package Quantity: 2k pcs

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