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FQP13N10 Real Image FQP13N10 Real Image
Same model may have multiple batches, images only for reference.
FQP13N10 Real Image FQP13N10 Real Image
FQP13N10 Real Image FQP13N10 Real Image
Same model may have multiple batches, images only for reference.

FQP13N10

Part No FQP13N10
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 12.8A TO-220
Datasheet
FQP13N10 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 12.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 16nC @ 10V
Max Input Capacitance 450pF @ 25V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 65W (Tc)
Maximum Rds On at Id,Vgs 180 mOhm @ 6.4A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 1039822-FQP13N10
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian FQP13N10 CAD Model

Description

The Fairchild/ON Semiconductor 425040 is an N-channel MOSFET with a drain-source breakdown voltage of 100V.

  • Drain-Source Breakdown Voltage: 100V
  • Maximum Rds On at Id,Vgs: 180 mOhm @ 6.4A, 10V
  • Continuous Forward Current-Max: 80mA
  • Mounting Type: Through Hole
  • Package: TO-220-3
  • Maximum Gate-Source Voltage: ±25V
  • Operating Temperature: -55°C to 175°C (TJ)
  • Supply and Demand Status: Limited
  • Quantity per Package: 1k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.4163 $63.7335
100+ $1.1622 $116.2200
155+ $1.1258 $174.4990
215+ $1.0896 $234.2640
275+ $1.0531 $289.6025
370+ $0.9443 $349.3910
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Availability: 3,400 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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