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FQP19N20C

Part No FQP19N20C
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 19A TO-220
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 53nC @ 10V
Max Input Capacitance 1080pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 139W (Tc)
Maximum Rds On at Id,Vgs 170 mOhm @ 9.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 016451-FQP19N20C
Family Name FQP19N20
Introduction Date March 01, 2004
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian FQP19N20C CAD Model

Description

The FQP19N20C is an N-Channel MOSFET designed and manufactured by Fairchild/ON Semiconductor. It is a high-performance power MOSFET.

  • Maximum Power Dissipation: 139W
  • Operating Temperature: -55°C to 150°C
  • Case/Package: TO-220-3
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current at 25°C: 19A (Tc)
  • Maximum Rds On: 170 mOhm @ 9.5A, 10V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Gate Charge: 53nC @ 10V
  • Applications: Power management, battery protection, and load switching

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0264 $51.3200
120+ $0.8422 $101.0640
185+ $0.8158 $150.9230
255+ $0.7895 $201.3225
330+ $0.7632 $251.8560
440+ $0.6843 $301.0920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,950 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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