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Same model may have multiple batches, images only for reference.
FQP2N30 Real Image
Same model may have multiple batches, images only for reference.

FQP2N30

Part No FQP2N30
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 300V N-Channel MOSFET
Datasheet
FQP2N30 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Series QFET
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 300V
Current - Continuous Drain (Id) @ 25°C 2.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 130pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 40W (Tc)
Rds On (Maximum) @ Id, Vgs 3.7 Ohm @ 1.05A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220-3
Package TO-220-3
Win Source Part Number 1175425-FQP2N30
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Balance
Family Name FQP2N30
Introduction Date May 17, 2000
ECCN EAR99
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian FQP2N30 CAD Model

Description

This electronic component is a MOSFET from Fairchild/ON Semiconductor. The Win Source Part Number for this component is 1175425-FQP2N30 and belongs to the QFET series.

  • Package: TO-220-3
  • Mounting Style: Through-hole
  • Operating Temperature: -55°C to 150°C (TJ)
  • Current Continuous Drain (Id) @ 25°C: 2.1A (Tc)
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand: Balance

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