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BLF183XRU

Part No BLF183XRU
Manufacturer Ampleon USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description RF FET LDMOS 135V 28DB SOT1121A / Trans RF MOSFET N-CH 135V 5-Pin CDFM Bulk
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Ampleon USA Inc.
Packaging Bulk
Transistor Type LDMOS (Dual), Common Source
Frequency 108MHz
Gain 28dB
Voltage - Test 50V
Current - Test 100mA
Power - Output 350W
Voltage Rating DC 135V
Package SOT-1121A
Manufacturer Package CDFM4
Win Source Part Number 770080-BLF183XRU
Popularity Medium
Supply and Demand Status Limited
Quantity per package 20
Family Name BLF183XR
Introduction Date December 07, 2015
ECCN EAR99
Country of Origin Philippines
Halogen Free Compliant
Estimated EOL Date 2030
Ultra Librarian 3D Model Ultra Librarian BLF183XRU CAD Model

Description

The BLF183XRU is a robust, high-power RF power LDMOS transistor designed for a wide range of applications in the HF to 600 MHz frequency band. Manufactured by Ampleon, this transistor is well-suited for demanding applications requiring high power and reliability.

Applications

  • Industrial, Scientific, and Medical (ISM) applications: Used in RF heating, plasma generation, and MRI systems.
  • Broadcast Transmitters: Ideal for FM and VHF radio broadcast amplifiers.
  • Military Communications: Utilized in high-power communication systems and radar applications.
  • Amateur Radio Amplifiers: Employed in high-power linear amplifiers for amateur radio enthusiasts.
  • HF to VHF Communications: Suitable for various communication systems within the specified frequency range.

Features

  • High Output Power: Delivers significant RF output power, typically up to 180W.
  • High Gain: Offers substantial power gain, simplifying amplifier design.
  • Wide Frequency Range: Operates efficiently from HF to 600 MHz.
  • LDMOS Technology: Provides excellent ruggedness and reliability.
  • Integrated ESD Protection: Enhanced protection against electrostatic discharge.
  • Excellent Linearity: Ensures low distortion in amplifier applications.
  • Thermally Enhanced Package: Designed for efficient heat dissipation.

Benefits

  • Increased Power Output: Enables higher signal strength and coverage in broadcast and communication systems.
  • Simplified Amplifier Design: High gain reduces the need for complex driver stages.
  • Improved System Reliability: Robust LDMOS technology ensures long-term performance.
  • Reduced Distortion: Excellent linearity minimizes signal degradation and interference.
  • Enhanced ESD Protection: Protects the device from damage during handling and operation.
  • Efficient Thermal Management: Thermally enhanced package allows for higher power operation without overheating.

Additional Details

The BLF183XRU operates at a supply voltage typically around 50V. It is designed for Class AB operation to achieve optimal linearity and efficiency. The device is available in a ceramic package optimized for thermal performance and ease of assembly. Proper heat sinking is crucial for reliable operation at high power levels. The BLF183XRU is a lead-free and RoHS-compliant device.

Typical Specifications:

  • Frequency Range: HF - 600 MHz
  • Output Power: 180 W
  • Gain: 21 dB
  • Supply Voltage: 50 V

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