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FQP34N20L

Part No FQP34N20L
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 31A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 72nC @ 5V
Max Input Capacitance 3900pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 180W (Tc)
Maximum Rds On at Id,Vgs 75 mOhm @ 15.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 1039846-FQP34N20L
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FQP34N20L CAD Model

Description

The FQP34N20L MOSFET from Fairchild/ON Semiconductor is a N-Channel polarity MOSFET that has a drain-source breakdown voltage of 200V and a continuous drain current of 31A (Tc) @ 25°C.

  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 72nC @ 5V
  • Maximum Rds On: 75 mOhm @ 15.5A, 10V
  • Package: TO-220-3
  • Mounting: Through Hole
  • Technology: MOSFET
  • Power Dissipation (Max): 180W (Tc)
  • Temperature Range: -55°C to 150°C (TJ)
  • Maximum Gate-Source Voltage: ±20V
  • Status: Obsolete (EOL), medium popularity
  • Supply and Demand: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.1435 $62.8925
125+ $0.9379 $117.2375
195+ $0.9090 $177.2550
265+ $0.8790 $232.9350
340+ $0.8501 $289.0340
455+ $0.7623 $346.8465
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 65,000 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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