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Same model may have multiple batches, images only for reference.
APT10035B2LLG Real Image
Same model may have multiple batches, images only for reference.

APT10035B2LLG

Part No APT10035B2LLG
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 28A T-MAX / Trans MOSFET N-CH 1KV 28A
Datasheet
APT10035B2LLG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Series POWER MOS 7
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 1000V
Current - Continuous Drain (Id) @ 25°C 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 2.5mA
Gate Charge (Qg) (Maximum) @ Vgs 186nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 5185pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 690W (Tc)
Rds On (Maximum) @ Id, Vgs 350 mOhm @ 14A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package T-MAX [B2]
Package TO-247-3 Variant
Win Source Part Number 768656-APT10035B2LLG
Popularity Medium
Supply and Demand Status Limited
Quantity per package 30
Family Name APT10035B2LLG
Introduction Date March 16, 1997
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian APT10035B2LLG CAD Model

Description

The Microsemi Corporation APT10035B2LLG is a member of the POWER MOS 7 family of MOSFETs.

  • Applications: Discrete Semiconductor Products
  • Continuous Drain Current @ 25°C: 28A
  • Maximum Drain-Source Voltage: 1000V
  • Maximum Power Dissipation @ 25°C: 690W
  • Mounting Style: Through-hole
  • Package: TO-247-3 Variant
  • Gate-Source Voltage: ±30V
  • Gate Threshold Voltage @ 2.5mA: 5V
  • Manufacturing Location: Philippines
  • Estimated EOL Date: Obsolete/End of life
  • Supply Status: Limited

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