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FQPF3N60C

Part No FQPF3N60C
Manufacturer Fairchild/ON Semiconductor
Catalog OEM Parts (F - I)
Sample
Rohs State Need to verify
ECAD Module
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Win Source Part Number 1059733-FQPF3N60C
Categories OEM Parts(F-I)
Manufacturer Fairchild/ON Semiconductor
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian FQPF3N60C CAD Model

Description

The FQPF3N60C is a N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Fairchild Semiconductor, now part of ON Semiconductor. MOSFETs are widely used as electronic switches in power electronics applications due to their high efficiency and fast switching speeds.

Applications

  • Switching Power Supplies: Used in AC-DC power supplies for computers, servers, and other electronic devices.
  • Motor Control: Employed in controlling the speed and direction of electric motors in appliances and industrial equipment.
  • DC-DC Converters: Used in voltage regulators and power management circuits.
  • Uninterruptible Power Supplies (UPS): Provides backup power in the event of a power outage.
  • Lighting Systems: Found in LED drivers and dimming circuits.

Features

  • High Voltage Capability: Rated for 600V drain-source voltage.
  • Low On-Resistance (RDS(on)): Minimizes power dissipation and improves efficiency.
  • Fast Switching Speed: Enables high-frequency operation and reduces switching losses.
  • Avalanche Rated: Can withstand transient voltage spikes.
  • TO-220F Package: Provides good thermal performance and easy mounting.

Benefits

  • High Efficiency: Low on-resistance reduces power loss and improves overall system efficiency.
  • Reliable Operation: High voltage rating and avalanche capability enhance robustness.
  • Simplified Design: Fast switching speed simplifies circuit design and reduces component count.
  • Cost-Effective: Provides a good balance of performance and price.
  • Ease of Use: TO-220F package simplifies mounting and heatsinking.

Specifications

Key specifications for the FQPF3N60C include:

  • Drain-Source Voltage (VDS): 600V
  • Gate-Source Voltage (VGS): ±30V
  • Continuous Drain Current (ID): 3A
  • Pulsed Drain Current (IDM): 9A
  • On-Resistance (RDS(on)): 3.2 Ω (typical) at VGS = 10V
  • Gate Charge (Qg): 11 nC (typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: TO-220F

The FQPF3N60C is a reliable and efficient N-Channel MOSFET suitable for a wide range of power electronics applications. Its high voltage rating, low on-resistance, and fast switching speed make it a good choice for designers seeking a cost-effective and high-performance switching solution.

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