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FQPF90N10V2

Part No FQPF90N10V2
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 90A TO-220F
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 191nC @ 10V
Max Input Capacitance 6150pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 10 mOhm @ 45A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220F
Dimension TO-220-3 Full Pack
Win Source Part Number 067473-FQPF90N10V2
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQPF90N10V2 CAD Model

Description

The Fairchild/ON Semiconductor FQPF90N10V2 MOSFET is an N-Channel polarity technology designed for high-performance applications.

  • Drain-Source Breakdown Voltage (Max): 100V
  • Continuous Drain Current: 90A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Gate Charge (Max): 191nC @ 10V
  • Mounting Type: Through-Hole
  • Package: Tube/Rail
  • Operating Temperature: -55°C to 175°C
  • Rds On (Max): 10 mOhm @ 45A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.3426 $60.1668
43+ $2.7431 $117.9533
66+ $2.6577 $175.4082
90+ $2.5710 $231.3900
117+ $2.4856 $290.8152
156+ $2.2292 $347.7552
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Availability: 25,000 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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