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Same model may have multiple batches, images only for reference.
FQU2N90TU_WS Real Image
Same model may have multiple batches, images only for reference.

FQU2N90TU_WS

Part No FQU2N90TU_WS
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 1.7A IPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 900V
Continuous Drain Current at 25°C 1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 15nC @ 10V
Max Input Capacitance 500pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 50W (Tc)
Maximum Rds On at Id,Vgs 7.2 Ohm @ 850mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1039993-FQU2N90TU_WS
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FQU2N90TU_WS CAD Model

Description

The FQU2N90TU_WS from Fairchild/ON Semiconductor is an N-channel MOSFET.

  • Drain-Source Breakdown Voltage: 900V
  • Continuous Drain Current @ 25°C: 1.7A
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 15nC @ 10V
  • Package: I-Pak
  • Maximum Rds On @ Id,Vgs: 7.2 Ohm @ 850mA, 10V
  • Maximum Input Capacitance: 500pF @ 25V

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Pricing & Ordering

Quantity Unit Price Ext. Price
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28+ $4.1430 $116.0040
44+ $4.0136 $176.5984
60+ $3.8843 $233.0580
77+ $3.7549 $289.1273
103+ $3.3668 $346.7804
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Availability: 33,500 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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