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Same model may have multiple batches, images only for reference.
HUF75307P3
Same model may have multiple batches, images only for reference.

HUF75307P3

Part No HUF75307P3
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description Not available to order TO-220
Sample
Rohs State Need to verify
ECAD Module
Need Help

Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-220AB
Continuous Drain Current (ID) 15 A
Drain to Source Breakdown Voltage 55 V
Drain to Source Resistance 90 mΩ
Element Configuration Single
Fall Time 45 ns
Gate to Source Voltage (Vgs) 20 V
Maximum Operating Temperature 175 °C
Min Operating Temperature -55 °C
Power Dissipation 45 W
Rise Time 40 ns
RoHS Non-Compliant
Turn-Off Delay Time 35 ns
Win Source Part Number 1005685-HUF75307P3
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Fairchild/ON Semiconductor
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian HUF75307P3 CAD Model

Description

The HUF75307P3 is a high power MOSFET transistor manufactured by Fairchild/ON Semiconductor. It is designed to be surface mounted on a TO-220AB package and has a power dissipation of 45 W.

  • Power Dissipation: 45 W
  • Continuous Drain Current (ID): 15 A
  • Drain to Source Breakdown Voltage: 55 V
  • Rise Time: 40 ns
  • Fall Time: 45 ns
  • Gate to Source Voltage (Vgs): 20 V
  • Commonly Used In: RF applications
  • Category: Transistors - FETs and MOSFETs - RF
  • RoHS Compliant: Non-RoHS Compliant
  • Maximum Operating Temperature: 175 °C
  • Minimum Operating Temperature: -55 °C

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