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Same model may have multiple batches, images only for reference.
HUFA75332S3ST Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

HUFA75332S3ST

Part No HUFA75332S3ST
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 60A D2PAK
Datasheet
HUFA75332S3ST Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 85nC @ 20V
Max Input Capacitance 1300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 145W (Tc)
Maximum Rds On at Id,Vgs 19 mOhm @ 60A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 204924-HUFA75332S3ST
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HUFA75332S3ST CAD Model

Description

The Fairchild/ON Semiconductor HUFA75332S3ST is a N-Channel MOSFET transistor designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current (25°C): 60A (Tc)
  • Rds On (Max): 19 mOhm @ 60A, 10V
  • Gate-Source Voltage (Max): ±20V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Input Capacitance (Max): 1300pF @ 25V
  • Gate Charge (Max): 85nC @ 20V
  • Package: D2PAK (TO-263AB)
  • Power Dissipation (Max): 145W (Tc)
  • Operating Temperature: -55°C to 175°C (TJ)
  • Status: Obsolete (EOL)
  • Popularity: Medium

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